general purpose transistors npn silicon maximum ratings rating symbol v alue unit collector?emitter voltage v ceo 45 vdc collector?base voltage v cbo 75 vdc emitter?base voltage v ebo 7.0 vdc collector current ? continuous i c 800 madc thermal characteristics characteristic symbol max unit total device dissipation fr? 5 board, (1) p d 225 mw t a = 25c derate above 25c 1.8 mw/c thermal resistance, junction to ambient r ja 556 c/w total device dissipation p d 300 mw alumina substrate, (2) t a = 25c derate above 25c 2.4 mw/c thermal resistance, junction to ambient r ja 417 c/w junction and storage temperature t j ,t stg ?55 to +150 c electrical characteristics (t a = 25c unless otherwise noted.) characteristic symbol min typ max unit off characteristics collector?emitter breakdown voltage v (br)ceo 45 ? ? vdc (i c = 10madc, i b = 0 ) collector?emitter breakdown voltage v (br)ces 75 ? ? vdc (i c = 10 adc, v eb = 0 ) emitter?base breakdown voltage (i e = 10 adc, i c = 0) v (br)ebo 5.0 ? ? vdc collector cutoff current i ces (v ce = 45 vdc, i e = 0 ) ? ? 20 nadc (v ce = 45 vdc, i e = 0 ) (t a =150c) ? ? 20 adc emitter cutoff current i ebo (v eb = 4.0 vdc, i c = 0) ? ? 20 nadc (v eb = 7.0 vdc, i c = 0) (3) ? ? 100 nadc 1. fr? 5 = 1.0 x 0.75 x 0.062 in. 2. alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina. 3. added i ebo test to guarantee quality for oxide defects 2 emitter 3 collector 1 base sotC23 device marking and ordering information device marking shipping BCW66GLT1 eg 3000/tape&reel ? we declare that the material of product compliance with rohs requirements. 2012- willas electronic corp. BCW66GLT1 preliminary
electrical characteristics (t a = 25c unless otherwise noted) (continued) characteristic symbol min typ m ax unit on characteristics dc current gain h fe ? ( i c = 100 adc, v ce = 10 vdc ) 50 ? ? ( i c = 10 madc, v ce = 1.0 vdc ) 110 ? ? ( i c = 100 madc, v ce = 1.0 vdc ) 160 ? 400 ( i c = 300 madc, v ce = 2.0 vdc ) 60 ? ? sm smallCsignal characteristics current?gain ? bandwidth product f t 100 ? ? mhz (i c = 20madc, v ce = 10 vdc, f = 100 mhz) output capacitance c obo ? ?1 2p f (v cb = 10 vdc, i e = 0, f = 1.0 mhz) input capacitance c ibo ? ? 8 0 p f (v eb = 0.5 vdc, i c = 0, f = 1.0 mhz) noise figure nf ? ? 10 db (v ce = 5.0 vdc, i c = 0.2 madc, r s = 1.0 k ? , f = 1.0 khz) switching characteristics turn?on time t on ? ? 100 ns (i b1 = i b2 = 15 madc,i c = 150madc, r l = 150 ?) turn?off ti me t off ? ? 400 ns (i b1 = i b2 = 15 madc,i c = 150madc, r l = 150 ?) 2012- willas electronic corp. general purpose transistors bc : *l preliminary
mm inches 0.037 0.95 0.037 0.95 0.079 2.0 0.035 0.9 0.031 0.8 sot-23 2012- willas electronic corp. general purpose transistors bc : *lt1 dimensions in inches and (millimeters) .080(2.04) .070(1.78) .110(2.80) .083(2.10) .006(0.15)min. .008(0.20) .003(0.08) .055(1.40) .035(0.89) .020(0.50) .012(0.30) .004(0.10)max. .122(3.10) .106(2.70) .063(1.60) .047(1.20) preliminary
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